ML9XX11 series type name ml925b11 f / m l920j11s / m l 92 5j 1 1 f mitsubishi laser diodes ingaasp dfb laser diodes description ML9XX11 series are dfb (distributed feedback) laser diodes emitting light beam around 1550nm. they are well suited for light source in long distance digital transmission systems. ml925b11f / ml920j11s are hermetically sealed devices with the photo diode for optical output monitoring. features low threshold current (typical 10ma) wide temperature range operation high - side mode suppression ratio (typical 40db) high speed response (typical 0.2nsec) mqw* active layer fsbh** structure fabricated by mocvd process * multiple quantum well ** facet selective - growth buried hetero structure application long - distance digital transmission system *** specification note type operation temperature range ML9XX11-01 tc=-40 to 85oc ML9XX11-02 tc=-20 to 85oc ML9XX11-03 tc= 0 to 85oc absolute maximum ratings electrical/optical characteristics (tc=25oc mitsubishi electric ma symbol parameter test conditions min. typ. max. unit ith threshold current cw - 10 30 ma iop operation current cw,po=5mw - 20 60 ma slope efficiency cw,po=5mw 0.15 0.25 - v vop operating voltage cw,po=5mw 1.2 1.8 mw/ma p peak wavelength cw,po=5mw ***)note 1530 1550 1570 nm beam divergence angle (parallel) cw,po=5mw 25 deg. beam divergence angle cw,po=5mw - 0.2 - - (perpendicular) smsr side mode suppression ratio cw,po=5mw ***)note i m cw,po=5mw 35 - - 35 45 deg. 30 40 - db monitoring output current tr,tf rise and fall time if=ith,po=5mw,10 - 90% - 0.4 0.2 ns ifd forward current (photo diode) - 2 ma symbol paramete r conditions ratings unit po light output power cw 6 mw vrl reverse voltage (laser diode) - 2 v vrd reverse voltage (photo diode) - 20 v tc case temperature - tstg storage temperature - -40to+100 oc oc -02 -20 to +85 -01 -40 to +85 -03 0 to +85
(1) 1.0min. 2.0min. 3.550.1 5.6 +0 -0.03 1.27 0.250.03 (glass) 18 1 2.10.15 1.2 0.1 4- 0.450.05 (2) 10.1 2-90o 2.00.25 (p.c.d.) 4.25 (3) (4) (0.25) (0.25) reference plane emitting facet (1) (2) (dimension:mm) 0.03 ml 9 25b1 1 f ld pd (3) (2) (1) (4) case outline drawings (1) 1.0min. 2.0min. 3.550.1 5.6 +0 -0.03 1.27 0.250.03 (glass) 18 1 2.10.15 1.2 0.1 4- 0.450.05 (2) 10.1 2-90o 2.00.25 (p.c.d.) 4.25 (3) (4) (0.25) (0.25) reference plane emitting facet (1) (2) (dimension:mm) 0.03 ml 9 20j11s ld pd (3) (4) (1) (2) case (1) 3.750.1 5.6 +0 -0.03 1.27 18 1 3.97 0.15 1.2 0.1 4- 0.450.05 (2) 10.1 2-90o 2.00.25 (p.c.d.) 4.3 (3) (4) (0.25) (0.25) reference plane emitting facet (1) (2) top view (7.51) (dimension:mm) 0.03 ml 9 25j1 1 f ld pd (3) (2) (1) (4) case m l 9 20j11 s m l 9 2 5 b 11f m l 9 2 5 j11f m l 9 xx1 1 s eries mitsubishi laser diodes ingaasp d fb-laser diodes
mitsubishi laser diodes ML9XX11 series ingaaspdfblaserdiodes
mitsubishi laser diodes ML9XX11 series ingaaspdfblaserdiodes
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